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electron mobility in Chinese

Pronunciation:
How to pronounce "electron mobility""electron mobility" in a sentence

Translationmobile phoneMobile

  • 電子遷移率
  • 電子移動(dòng)性

Examples

  • After this interview , i learned about electron mobility
    通過這次訪問,我了解到電子遷移。
  • High electron mobility transistor hemt
    高速電子遷移率晶體管
  • Electron mobility detector
    電子適移率檢測(cè)器
  • I - v testing of a single transistor has been carried out . the p - si film is prepared by ela , and electron mobility is calculated about 30cm2 / v
    對(duì)用激光晶化法制備的多晶硅薄膜所制備的p - si - tft單管進(jìn)行了-測(cè)試,計(jì)算電子遷移率為約30cm ~ 2 v
  • Due to the good performance of gaas devices of high frequency , high electron mobility and low noise , the high frequency devices are mostly made of gaas materials now
    由于gaas器件優(yōu)良的高頻、高電子遷移率、低噪聲性能,所以現(xiàn)在高頻器件一般都選用gaas材料。
  • Finally , the electron mobility in 6h - sic inversion layers is studied by single - particle monte carlo technique . the simulation results fit the experimental data very well
    對(duì)6h sic反型層遷移率進(jìn)行的moniecaro模擬結(jié)果表明,庫(kù)侖中心的相關(guān)性,庫(kù)侖電荷量及電荷中心和sic侶。
  • Based on gan hemt device physics and experiment results , we found electron mobility is depend on sheet density of 2deg and proposed a new gan hemt current collapse physical model
    基于ganhemt器件物理和實(shí)驗(yàn)分析測(cè)試結(jié)果,發(fā)現(xiàn)電子遷移率與二維電子氣濃度有關(guān),并提出了一種gan電流崩塌效應(yīng)的新物理模型。
  • This model described relationship of current collapse and traps in buffer layer , and the normalized product of electron mobility and 2deg density with and without current collapses was 0 . 95 vgs
    該模型描述了電流崩塌效應(yīng)與緩沖層中陷阱的相互關(guān)系,并獲得了電流崩塌前后遷移率與二維電子氣濃度乘積的歸一化值0 . 95 vgs 。
  • Mgf plays the role of segregation . the third method is to enhance the oel by means of making complex with n - vi compounds . el - vi compounds are very stable and possessing higher electron mobility than organic materials
    但電子不是在真空中,而是在固體中加速的,我們稱它為固態(tài)陰極射線發(fā)光或類陰極射線發(fā)光,它的激發(fā)態(tài)是成對(duì)的電子及空穴。
  • Although electrons do not move quite as easily in polysilicon as they do in the single - crystal kind , research has produced 3 - d transistors with 90 to 95 percent of the electron mobility seen in their 2 - d counterparts
    雖然電子在多晶矽中移動(dòng)不如在單晶矽中那麼容易,但在這項(xiàng)研究做出來的三維電晶體里,電子的移動(dòng)速率已達(dá)同類二維晶片的90 ~ 95 % 。
  • More examples:  1  2

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